[15a-P8-1~31] 12.1 作製・構造制御

▼ [15a-P8-10] Formation of polymeric organic semiconductor films on lyophobic gate insulator surfaces by self-assisted flow-coating

〇(M2)Bulgarevich Dmitrievich Kirill^1,2、坂本 謙二¹、三成 剛生¹、安田 剛¹、三木 一司^1,2 (1.物材機構、2.筑波大数物)

キーワード：flow-coating method, lyophilic/lyophobic patterns, polymer organic semiconductor

The charge carrier mobility of many organic semiconductor materials can be dramatically improved by using highly hydrophobic gate insulator surfaces. However, the film formation on such surfaces by solution processing is very difficult due to dewetting of common organic solvents, which is a serious problem for improving the performance of OFETs. Previously, we reported a modified flow-coating method that allows film formation on highly hydrophobic substrate surfaces. The continuous film formation was achieved by producing a suitable lyophobic/lyophilic surface pattern. In this work, the coating mechanism was made clear by performing surface energy calculation.