[15a-P8-1~31] 12.1 Fabrications and Structure Controls

[15a-P8-25] Temperature Dependence of Initial Thin-Film Growth Process of Alkylated Organic Semiconducting Materials

〇Daiki Kuzuhara¹, Shinpei Miura¹, Mamoru Kikuchi¹, Tomoyuki Koganezawa², Ichiro Hirosawa², Noriyuki Yoshimoto¹ (1.Iwate Univ., 2.JASRI)

Keywords:organic semiconductor, 2D-GIXD, crystal growth

Initial thin-film growth processes of organic semiconducting materials are important for determination of the device performances. We have performed in-situ real-time two dimensional grazing incidence X-ray diffraction (2D-GIXD) measurements using with synchrotron radiation for characterization of initial thin-film growth process. In this presentation, we report the temperature dependence of initial crystal growth process of oligothiophenes characterized by in-situ real time 2D-GIXD attached with temperature control stage.