09:30 〜 11:30
▲ [15a-P9-1] Optical properties of InAs/GaAs quantum dots grown with different growth modes
キーワード：quantum dots, MBE
Self-assembled quantum dots (QDs) have attracted interest for their promising applications, such as QD lasers and intermediate band solar cells. However, the non-uniform size distribution and the presence of wetting layer (WL), inevitably formed during epitaxial growth by Stranski-Krastanov (SK) mode, impose great challenges for the device performances. To this end, QD growth methods alternative to the use of SK mode are required. In addition to SK growth, self-assembled QDs can be grown either by cyclic deposition of submonolayer (SML) InAs and GaAs by the so-called SML growth mode, which should result in QDs free of WL. Besides, migration enhanced epitaxy (MEE) could be applied to the SML growth to obtain QDs of different morphology and optical properties. In this paper, QDs have been grown by SK, SML, and MEE modes with carefully designed shutter sequences, and their optical properties are compared.