[15p-211-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

[15p-211-10] Development of passivation films for n-type crystalline Si solar cells (1)

〇Yasutoshi Yashiki¹, Kunihiko Nishimura¹, Yumiko Kobayashi¹, Tatsuro Watahiki¹, Takayuki Morioka¹, Hidetada Tokioka¹, Mikio Yamamuka¹ (1.Mitsubishi Electric Corp.)

Keywords:solar cell, crystalline silicon, PERT

Novel passivation films for n-type crystalline Si solar cells were studied. The passivation films need high passivation performance and high temperature process resistance due to electrodes were formed by fire-through process. The film structure and process condition strongly affect process resistance and we obtained Implied-Voc of 700mV after annealing process over 800 degree C. We also report that fire-through process resistance and solar cell performance.