[15p-211-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

[15p-211-15] Quantitative evaluation of active dopant distribution and estimation of effective diffusivity in phosphorus-implanted monocrystalline silicon solar cell using scanning nonlinear dielectric microscopy

〇Kotaro Hirose¹, Katsuto Tanahashi², Hidetaka Takato², Yasuo Cho¹ (1.RIEC, Tohoku Univ., 2.AIST)

Keywords:semiconductor, capacitance, doping

Dopant distribution in solar cell is important evaluation target related efficiency of device. We visualized active dopant distribution in the cross section of phosphorus-implanted monocrystalline silicon quantitatively using scanning nonlinear dielectric microcopy (SNDM). Effective diffusivity D_eff was estimated from the quantitative measurement result. We simulated 3D dopant diffusion from ion implantation condition and D_eff, and the simulation result is consistent with the actual SNDM results. Therefore, we concluded that quantitative evaluation of dopant distribution using SNDM is useful.