[15p-211-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

[15p-211-4] Study of Annihilation Mechanism of Ni-related Deep Level in mc-Si under Reverse Bias with IT-DLTS Measurement

〇Yuuta Miyabe¹, Yoshihumi Yamashita¹, Takeshi Nishikawa¹, Masaki Hada¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

Keywords:polycrystalline silicon, DLTS measurement

Metallic impurities are easy to remain at grain boundary in polycrystalline silicon and cause to decline of generating efficiency. Our laboratory have estimated impurities-related trap level with DLTS measurement. Similar to Cu, the DLTS signal of Ni on the grain boundary in mc - Si disappears at around 260 K due to reverse bias application of DLTS measurement and it recovers by 0 bias annealing. Therefore, we used Isothermal DLTS method which can detect the Ni signal below the annihilation temperature, and investigated the difference in the recovery process when the magnitude of the reverse bias for annihilation is changed. As a result, we obtained knowledge about the mechanism of annihilation under reverse bias.udy.