[15p-211-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [15p-211-7] Evaluations of Oxygen Precipitation Behavior in n-type Cz-Si for Photovoltaic by Infrared Tomography -Effect of C Concentration and Growth Conditions

〇Kousuke Kinoshita¹, Takuto Kojima¹, Ryota Suzuki¹, Hiroto Kobayashi¹, Yoshio Oshita², Isao Masada³, Shouji Tachibana³, Atushi Ogura¹ (1.Meiji Univ., 2.Toyota Tech. Inst., 3.Tokuyama Co ,Ltd.)

Keywords:Crystal Si, Oxygen Precipitate, Carbon