2017年第64回応用物理学会春季学術講演会

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一般セッション(口頭講演)

3 光・フォトニクス » 3.5 レーザー装置・材料

[15p-213-5~20] 3.5 レーザー装置・材料

3.5と3.14のコードシェアセッションあり

2017年3月15日(水) 14:30 〜 19:00 213 (213)

小澤 祐市(東北大)、戸倉川 正樹(電通大)、湯本 正樹(理研)

18:15 〜 18:30

[15p-213-18] Generation of sub-nanosecond multi-wavelength optical pulses based on semiconductor laser diodes and stimulated Raman scattering

JuiHung Hung1、Chang Kai-Hsun1、Fang Yi-Cheng1、Peng Lung-Han2、Yokoyama Hiroyuki1 (1.NICHe, Tohoku Univ.、2.GIPO, National Taiwan Univ.)

キーワード:Gain-switched semiconductor optical amplifier, GS-SOA, Stimulated Raman Scattering, SRS, Stimulated Emission Depletion, STED

We have generated multi-wavelength sub-nanosecond optical pulses having pulse energy of nearly 10 nJ based on an advanced semiconductor laser technology. Smooth and single peak optical pulses are generated by the gain switching of a 1064-nm semiconductor-laser optical amplifier, and are converted to second-harmonic optical pulses after the amplification by Yb-doped optical fiber amplifiers. The second-harmonic pulses then are coupled into a single-mode fiber to induce 6 consecutive red-shifted peaks via stimulated Raman scattering. This wavelength-selectable sub-ns light source opens the possibility of multi-color stimulated emission depletion (STED) microscopy.