[15p-315-1~17] 13.8 Compound and power electron devices and process technology

△ [15p-315-16] Continuous operation of double NO₂ hole doping H-diamond MOS FETs

〇(M1)Kosuke Funaki¹, Yuma Ishimatsu¹, Satoshi Masuya¹, Takayoshi Oshima¹, Makoto Kasu¹, Oishi Toshiyuki¹ (1.Saga Univ.)

Keywords:Diamond, Field effect transistor (FET), Stress test

Diamond has high dielectric breakdown electric field, hole mobility and thermal conductivity, and is therefore expected as a next generation power device.However, it is reported that conventional hydrogen-terminated diamond MOSFETs deteriorate rapidly. We reported that the hydrogen terminated hole channel can be thermally stabilized with an Al ₂ O ₃ protective film. We report on the continuous operation of hydrogen terminated diamond MOSFET using Al ₂ O ₃ protective film this time.