High voltage operation of a rectenna circuit using diamond elements

Naoto Kawano; Naru Fukami; Satoshi Masuya; Tayoshi Oshima; Makoto Kasu; Toshiyuki Oishi

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[15p-315-1~17] 13.8 Compound and power electron devices and process technology

Wed. Mar 15, 2017 1:15 PM - 5:45 PM 315 (315)

Naoteru Shigekawa(Osaka City Univ.), Hiroshi Okada(Toyohashi Univ. of Tech.)

5:30 PM - 5:45 PM

△ [15p-315-17] High voltage operation of a rectenna circuit using diamond elements

〇(M1)Naoto Kawano¹, Naru Fukami¹, Satoshi Masuya¹, Tayoshi Oshima¹, Makoto Kasu¹, Toshiyuki Oishi¹ (1.Saga Univ.)

Keywords:Diamond, Rectenna circuit, Schottky barrier diode

Since diamond is a high dielectric breakdown electric field, it is a material suitable for increasing the power of wireless power transmission.We have demonstrated that a rectenna circuit using a diamond Schottky barrier diode so far can convert high frequencies of operating voltage 9 V and frequency 10 MHz to DC.This time we will report it because it was operated at higher voltage (amplitude 50 V).