[15p-318-1~11] CS.4 7. Code-sharing Session: Beam Technology and Nanofabrication

[15p-318-10] Development of LPP-EUV light source for optical lithography

〇Yuichi Nishimura¹, Yuuki Takeda¹, Rei Takenaka¹, Yuta Takashima¹, Tsutomu Kashiwazaki¹, Takahisa Fujimaki¹, Osamu Fukuda¹, Takayuki Osanai¹, Koutaro Miyashita¹, Hirokazu Hosoda¹, Masahiko Andou¹, Katsuhiko Wakana¹, Takayuki Yabu¹, Yoshifumi Ueno¹, Toru Suzuki¹, Tsukasa Hori¹, Tamotsu Abe¹, Takashi Saitou¹, Hakaru Mizoguchi¹ (1.Gigaphoton Inc.)

Keywords:EUV light source, EUV lithography

An extreme ultraviolet (EUV) light source for optical lithography has been developed by Gigaphoton Inc. with a laser produced plasma methods. We utilize a radiation from tin-plasma which has an emission peak at wavelength of 13.5nm and is excited by short-pulse carbon dioxide (CO₂) laser. At this time, on our pilot type EUV light source system designed for high-volume manufacturing, we have attained the stable 100W EUV output power and 5% conversion efficiency. In this paper, we present the technological development progress contributed to our results.