Synthesis Temperature Dependence of the Optical Gap in Graphitic Carbon Nitride Films

Hitoe Habuchi; Hiroaki Aoyama; Kazushi Yasuda; Hirofumi Takikawa

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[15p-412-1~18] 6.2 Carbon-based thin films

Wed. Mar 15, 2017 1:15 PM - 6:15 PM 412 (412)

Hiroki Akasaka(Titech), Yasuharu Ohgoe(Tokyo Denki Univ.), Takako Nakamura(AIST)

5:00 PM - 5:15 PM

[15p-412-14] Synthesis Temperature Dependence of the Optical Gap in Graphitic Carbon Nitride Films

〇Hitoe Habuchi¹, Hiroaki Aoyama¹, Kazushi Yasuda¹, Hirofumi Takikawa² (1.NIT, Gifu Coll., 2.Toyohashi Univ. Technol.)

Keywords:g-C3N4, semiconductor film

Graphitic carbon nitride(g-C₃N₄) shows a semiconducting properties with bandgap of 2.7 eV. G-C₃N₄ films were synthesised by evaporation with guanidine carbonate as a source. As keeping a temperature difference of 50 C between the source and the substrate, the optical gap decreased with elevating source temperature from 600 to 650 C.