[15p-421-1~18] 9.2 ナノワイヤ・ナノ粒子

[15p-421-9] 通信波長帯ナノワイヤレーザの波長制御

〇章 国強^1,2、滝口 雅人^1,2、舘野 功太^1,2、後藤 秀樹¹ (1.NTT 物性研、2.NTTﾅﾉﾌｫﾄﾆｸｽｾﾝﾀ)

キーワード：半導体、ナノワイヤ、レーザ

Semiconductor nanowires (NWs) offer the possibility of reducing the footprint of devices for 3D integration and enduring large lattice mismatch for breaking the limitation of material combination. Telecom-band NW lasers are extremely important for optical data communication, spectroscopy, and medical diagnosis. Although ultraviolet, visible, and near-infrared NW lasers have been demonstrated, room-temperature (RT) telecom-band NW lasers have not been realized due to the material issues. Recently we have demonstrated telecom-band (1.5-1.6 µm) NW lasers at RT by using multi-stacked InP/InAs heterostructure NWs [1]. The high controllability of synthesis approach enables one to tune the emission wavelength in a wide range through quantum confinement effect [2]. Hence this provides a high potential to realize the function of wavelength modulation in the whole telecom-band window. Here we report the controllable wavelength in 1.2-1.6 µm in the InP/InAs heterostructure NW laser by tuning the flow rates of the source materials of indium and arsenic.
This work was supported by JSPS KAKENHI (15H05735 and 16H03821).