[15p-422-1~16] 3.13 Semiconductor optical devices

▲ [15p-422-8] Electro-absorption Modulator Integrated with Transverse Coupled Cavity VCSELs

〇(D)Shanting Hu¹, Xiaodong Gu¹, Fumio Koyama¹ (1.Tokyo Tech.)

Keywords:TCC-VCSELs, Electro-absorption Modulator

Semiconductor lasers, especially VCSELs, have been widely used as data transmitters to construct cost-effective high-speed infrastructure [1]. A key challenge currently is to achieve higher modulation bandwidth of VCSELs to meet the demand for rapidly growing data traffics. Earlier works from our lab have shown that transverse coupled cavity VCSELs (TCC-VCSELs) can achieve a bandwidth enhancement through direct modulation [2,3]. On the other hand, the integration of an electro-absorption modulator is also a good candidate to realize high-speed operation beyond the limit of direct modulation. So far, there have been reports on vertical integrations of a VCSEL and an electro-absorption modulator [4]. In our group, we proposed and demonstrated the lateral integration of VCSEL and slow-light modulator [5]. However, there still remains a difficulty in increasing the coupled power. In this paper, we propose an electro-absorption modulator laterally integrated with TCC-VCSELs for increasing the output power.