[15p-501-1~19] CS.6 10.1,10.2,10.3,10.4 Code-sharing session "Emerging control-methods of magnetization and related phenomena"

▼ [15p-501-3] Electric field effect on perpendicular magnetic anisotropy in Ta/CoFeB/Mg_1-xTi_xO

〇(P)Tiar Ikh¹, Shinya Kasai¹, Pohan Cheng^1,2, Koki Mukaiyama¹, Tadakatsu Ohkubo¹, Kazuhiro Hono^1,2 (1.National Institute for Materials Science, 2.University of Tsukuba)

Keywords:PMA, MTJ, MRAM

The increasing capacity of magnetic random access memory (MRAM) requires the increase of perpendicular magnetic anisotropy (PMA) energy to maintain the thermal stability of free layer pillars in magnetic tunnel junctions (MTJs). In order to gain the maximum advantage of electric field control of PMA, the PMA change for a given electric field E must scale with the magnitude of PMA. In addition, the electric field should decrease the PMA energy for at least one polarity. By the use of two different barrier materials, we observed two different areal PMA energy (K_efft) dependences on barrier thickness. This trend can be qualitatively reproduced for bottom-CoFeB pillars in orthogonal MTJs that enable us to investigate the electric field effect on various PMA energy levels, ξ =ΔK_efft/ΔE, while keeping the same condition for Ta underlayer.