[15p-503-1~16] 15.4 III-V-group nitride crystals

△ [15p-503-1] Analysis of Mass Flux near a Seed Face in a Sublimation Method of AlN Crystal Growth

〇Yudai Maji¹, Satoshi Nakano², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

Keywords:transport simulation, sublimation method, AlN crystal growth

We report transport simulations of Al and N₂ by a sublimation method of AlN bulk crystal growth and results of analysis of mass flux at different pressures and temperatures. On a seed face, there is a high equilibrium pressure of N₂, and it occurs an inverse diffusion of N₂ from a seed to a source, then N flux to a seed reduces. Consequently, a flux ratio of Al to N is about ten times near a seed face. In conclusion, it is expected that a growth takes place in a condition of Al-rich in a sublimation method.