1:45 PM - 2:00 PM
△ [15p-503-1] Analysis of Mass Flux near a Seed Face in a Sublimation Method of AlN Crystal Growth
Keywords:transport simulation, sublimation method, AlN crystal growth
We report transport simulations of Al and N2 by a sublimation method of AlN bulk crystal growth and results of analysis of mass flux at different pressures and temperatures. On a seed face, there is a high equilibrium pressure of N2, and it occurs an inverse diffusion of N2 from a seed to a source, then N flux to a seed reduces. Consequently, a flux ratio of Al to N is about ten times near a seed face. In conclusion, it is expected that a growth takes place in a condition of Al-rich in a sublimation method.