6:00 PM - 6:15 PM
[15p-503-16] Investigation of core structure of inclined threading dislocation in GaN layer
Keywords:GaN, threading dislocation, core structure
We have evaluated atomic arrangements in threading dislocation cores using cross-sectional and plan-view scanning transmission electron microscopy (STEM). We found the extra displacement in a-type threading dislocations. In this study, we investigated both the atomic arrangements in the core structure and inclination of threading dislocations in GaN layers grown by MOVPE and HVPE using STEM.