[15p-503-1~16] 15.4 III-V-group nitride crystals

[15p-503-5] Suppression of Fe diffusion in GaN Layer under Low Temperature Growth Condition

〇Tetsuro Ishiguro¹, Atsushi Yamada¹, Junji Kotani¹, Norikazu Nakamura¹ (1.Fujitsu Lab.)

Keywords:GaN, High electron mobility transistor, Fe

In the growth of GaN HEMT structure with Fe-doped buffer layer, alternative technologies are needed for suppressing the undesirable Fe diffusion into the undoped-GaN layer. In this study, we investigated the temperature dependence of the Fe diffusion for undoped-GaN layer and demonstrated the remarkable suppression of Fe diffusion at the growth temperature of 810C due to the concentration of Fe atoms between undoped and Fe-doped GaN layer.