[15p-503-1~16] 15.4 III-V-group nitride crystals

[15p-503-8] Electrical properties of Ni/n-GaN Schottky Diodes on free-standing m-plane GaN Substrates

〇Hisashi Yamada¹, Hiroshi Chonan¹, Tokio Takahashi¹, Mituaki Shimizu¹ (1.AIST)

Keywords:GaN, nonpolar, m-plane

The electrical properties of Ni/n-GaN Schottky diodes on m-plane GaN substrates were investigated. The silicon and carbon concentration of n-GaN, grown by metal-organic chemical vapor deposition, on m-plane GaN substrates was found to be low. Carrier concentration and silicon atomic concentration of n-GaN showed lineality relationship. Leakage current of the diodes on m-plane GaN substrates was greatly suppressed by decreasing the carrier concentration. The experimental data were fitted by using the thermionic field emission model under the measured carrier concentration and schottky barrier height.