[15p-B6-1~16] 17.2 グラフェン

▲ [15p-B6-10] An in-situ Annealing Study of Interlayer Conduction in Twisted Bilayer Graphene

〇(D)Kulothungan Jothiramalingam¹、Muruganathan Manoharan¹、Schmidt Marek E.¹、Mizuta Hiroshi¹ (1.JAIST)

キーワード：Graphene, Inter-layer resistance, In-situ annealing

The interlayer transport between individual layers of 2D materials is an ideal subject for studying the fundamental aspects of charge conduction in layered materials [1-2]. We report on the experimental observation of incoherent conduction in twisted bilayer graphene and a significant reduction in the interlayer resistance by applying an in-situ annealing process. This process enables the reduction of wrinkles and improves homogeneities in the interlayer, thus lessen the distance between the bottom and top graphene layers.