[15p-E206-1~15] 9.4 Thermoelectric conversion

[15p-E206-13] [INVITED]
Crystal structure and electronic properties of V-substituted melt grown MnSi_γ samples

〇HARUKI HAMADA¹, Yuzuru Miyazaki¹, Kei Hayashi¹ (1.Tohoku Univ.)

Keywords:Higher manganese silicides, thermoelectric

MnSi_γ is known as one of the promising p-type thermoelectric materials. MnSi_γ has a complex crystal structure consisting of [Mn] and [Si] sublattices. It is reported that the [Si] sublattice contains lattice strain. The lattice strain in the [Si] sublattice can be released by partial substitution of V for Mn. In the present study, we will discuss the relationship between the release of the lattice strain in the [Si] sublattice and thermoelectric properties for the melt glown MnSi_γ.