[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-11] Expansion and Contraction of Single Shockley Stacking Faults in 4H-SiC Epitaxial Layer under Ultraviolet Irradiation

〇Takanori Tanaka¹, Hiromu Shiomi¹, Naoyuki Kawabata², Yoshiyuki Yonezawa¹, Tomohisa Kato¹, Hajime Okumura¹ (1.AIST, 2.Mitsubishi Electric)

Keywords:SiC, stacking faults, ultraviolet irradiation