Analysis on Relationship between Pulse Generation and Carrier Sweeping-out in Reverse Reocvery of SiC-p+/p-/n+ Diode

Takuma Shirai; Noriyuki Iwamuro; Kenji Fukuda

4:45 PM - 5:00 PM

[15p-F204-12] Analysis on Relationship between Pulse Generation and Carrier Sweeping-out in Reverse Reocvery of SiC-p⁺/p^-/n⁺ Diode

〇Takuma Shirai¹, Noriyuki Iwamuro¹, Kenji Fukuda² (1.Univ. Tsukuba, 2.AIST)

Keywords:Power Semiconductor, SiC, pin-Diode

Authors have studied on the improvement of high breakdown voltage SiC-pin diode for the application of accelerator. The aim of this study is to clarify guideline of designing structure of diode to generate a high voltage and high speed pulse, simultaneously. In this report, the authors analyzed precisely the relationship between pulse generation and carrier sweeping-out phenomena by EHP-distribution and voltage-distribution from reverse recovery characteristics of p⁺/p^-/n⁺ diode and verified them by using device simulation.

Presentation information

[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-12] Analysis on Relationship between Pulse Generation and Carrier Sweeping-out in Reverse Reocvery of SiC-p⁺/p^-/n⁺ Diode

Presentation information

[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-12] Analysis on Relationship between Pulse Generation and Carrier Sweeping-out in Reverse Reocvery of SiC-p+/p-/n+ Diode

[15p-F204-12] Analysis on Relationship between Pulse Generation and Carrier Sweeping-out in Reverse Reocvery of SiC-p⁺/p^-/n⁺ Diode