[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-3] Partial Dislocation Motion under Electron Beam Irradiation by SEM

Ryu Nakata¹, 〇Yoshifumi Yamashita¹, Takeshi Nishikawa¹, Masaki Hada¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

Keywords:4H-SiC, partial dislocation motion, electron beam irradiation by SEM

We observed Shockley-type stacking faults (SSF) in 4H-SiC by scanning electron microscope (SEM). SSF expand under the irradiation of electron beam of SEM probe. Images of SSF were recorded for each frame and we studied the motion of 30° Si partial dislocation (PD) that forms a boundary of the SSF. From the SSF images obtained by changing the scanning conditions (number of times, speed, magnification, direction, irradiated region), we confirmed that the traveling distance of a PD is proportional to the sum of the time during which the PD are irradiated, and we also could estimate the motion of PD during one frame electron beam sweep irradiation.