[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-5] Characterization of Conduction Mechanisms in Heavily Al-Doped 4H-SiC
and Possibility to Reduce Its Resistance

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

Keywords:Conduction Mechanisms