2017年第64回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

22 合同セッションM 「フォノンエンジニアリング」 » 22.1 合同セッションM 「フォノンエンジニアリング」

[15p-F206-1~14] 22.1 合同セッションM 「フォノンエンジニアリング」

2017年3月15日(水) 13:45 〜 18:00 F206 (F206)

中村 芳明(阪大)、山本 貴博(東理大)、山口 浩司(NTT物性研)

14:45 〜 15:00

[15p-F206-4] Colloidal Quantum Dot Arrays for Thermoelectric Devices

Bisri Satria Zulkarnaen1、Shin Daiki2、Shimizu Sunao1、Ibanez Maria3,4、Kovalenko Maksym3,4、Iwasa Yoshihiro1,2 (1.RIKEN CEMS、2.Univ. Tokyo、3.ETH Zurich、4.EMPA)

キーワード:colloidal quantum dots, electric double layer gating, decoupling of electronic and thermal transport

Nanomaterials is one of the most promising building blocks that may overcome the challenges to develop high performance thermoelectric materials. . Lead chalcogenide colloidal quantum dots, either PbS and PbTe QDs are among the most prospective materials sought for this direction, because of its natural abundance and its known superb thermoelectric properties in its bulk form, respectively. In this presentation, we show the importance of charge-density control on PbS and PbTe CQD assemblies by field-induced doping utilizing electric-double-layer (EDL) gating to access the discrete energy levels of the quantum confinement effect of these materials. The preservation of the discrete energy levels, indicated by the sharp electronic density of states, despite the large scale array of the assembly might enable us to expect the observation of high Seebeck coefficient when we access them.