[15p-F206-1~14] 22.1 Joint Session M

[15p-F206-9] Dependence of thermal conductivity on Ge ratio in composite films of MnSi_1.7 and SiGe

〇Yosuke Kurosaki¹, Shin Yabuuchi¹, Akinori Nishide¹, Jun Hayakawa¹ (1.Hitachi, Ltd.)

Keywords:thermal conductivity, manganese silicide

We report a lowered thermal conductivity in nm-scale composite thin films of MnSi_1.7 with SiGe. Ge was clarified to be added into not MnSi_1.7 (mother phase) but Si (additive phase) from structural analysis. The thermal conductivity of the composite films decreased to 0.8 W/Km, which is experimentally observed minimum in MnSi_1.7-based materials, by increasing Ge amount owing to nm-scale phonon scatterings and reduction of sound velocity.