[15p-MH-1~7] Innovation Inspired by Informatics in Crystal Growth Processes

[15p-MH-5] Multi-Physics Simulation of Epitaxial Growth

〇Kenji Shiraishi^1,2, Kazuki Sekiguchi², Kenta Chokawa², Hiroki Shirakawa², Kento Kawakami², Yoshihiro Yamamoto², Masaaki Araidai^1,2, Kentaro Nagamatsu¹, Shugo Nitta¹, Naoya Okamoto^3,2, Katsunori Yoshimatsu^1,2, Yoshihiro Kangawa^4,1, Koichi Kakimoto⁴, Hiroshi Amano^1,2,5 (1.IMaSS, 2.Nagoya Univ., 3.CCS, 4.Kyushu Univ., 5.VBL)

Keywords:Gallium Nitride, Metal Organic Vapor Phase Epitaxy, Simulation

We Investigate the multi-physics simulation related to epitaxial growth. In particular, we focus on the GaN MOVPE growth and we reexamine the chemical reaction which conventional growth simulations treat as the main reaction in GaN MOVPE growth. Moreover, we also discuss the physically correct epitaxial growth simulation which can collaborate with informatics.