16:00 〜 18:00
▲ [15p-P11-11] Preparation of Tin bubble targets for Extreme Ultraviolet generation
キーワード：Extreme Ultraviolet (EUV)
State of the art extreme ultraviolet (EUV) technology has attracted a great deal of attention for production of the next generation of integrated circuits. Laser produced plasma (LPP) EUV light from a low ion density light source can obtain higher conversion efficiency of up to 6-7%. [1] Bulk tin produces an intense 13.5nm peak EUV, but generates huge debris that will damage the mirror at the same time. Tin bubble targets is a type of low-mass and debris free fuel source for future EUV emission. To realize the high repetition EUV generation and the compact system for future lithography, the recent research focused on the preparation of the tin bubble targets and the delivery process to the laser shot position. Tin bubble targets prepared by exchanging the poly-electrolyte solution for several times to increase the stability of the bubbles. As a result, an amount (25mL) of tin bubble targets (without solution) easily obtained via separating the bubble targets from the solution by opening the valve of the dropping funnel to remove the solution. The high repetition rate injection tested by water droplet prove the possibility of high repetition rate EUV emission. Finally, the delivered bubble targets can also stably pass through the delivery system to the nozzle.