[15p-P12-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-P12-3] first-principles study on leakage current caused by oxygen vacancies at HfO₂/SiO₂/Si interface

〇(M1)Kensuke Takagi¹, Tomoya Ono^1,2 (1.Grad. School of Pure and Appl. Soc. Univ. of Tsukuba, 2.Center for Comp. of Soc. Univ. of Tsukuba)

Keywords:semiconductor, first-principles calculation, high-k MOSFET