[15p-P13-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[15p-P13-10] Effect of impurities in 3C-SiC of photothermal divergence method

〇Shun Kamada¹, Shinya Takeichi², Takanori Kozai², Takeshi Fujihara², Tomoya Konishi², Toshihiro Okamoto¹, Masanobu Haraguchi¹, Masaru Kamano² (1.Tokushima Univ, 2.National Institute of Technology, Anan College)

Keywords:SiC