[15p-P13-1~11] 13.2 探索的材料物性・基礎物性

▲ [15p-P13-2] Characterizations of crystalline quality and electrical properties of nitrogen-doped BaSi₂ films on Si(111)

〇(M1)Xu Zhihao¹、Deng Tianguo¹、Takabe Ryota¹、Emha Bayu Miftahullatif¹、Toko Kaoru¹、Suemasu Takashi¹ (1.Univ.Tsukuba)

キーワード：N doped BaSi2

BaSi₂ has many advantages such as a band gap of 1.3 eV, matching the solar spectrum, a large absorption coefficient of 3 × 10⁴ cm^-1 at 1.5 eV, exceeding those of CIGS [1], and a minority-carrier diffusion length of ca. 10 μm [2]. Because of these excellent properties, BaSi₂ is considered to be a good material for pn junction solar cells. BaSi₂ doped with group 15 element such as P, As, and Sb shows n-type conductivity. However, there has been no report on N-doped BaSi₂. Thereby, we have attempted to dope nitrogen into BaSi₂ (N-doped BaSi₂) using radio-frequency (RF) plasma N source. Previously we reported that the hole concentration was not determined by a beam equivalent pressure of N₂ but plasma intensity of N atom. We can control its carrier type (p or n) by plasma intensity. However, the carrier concentration seems not depend on the plasma intensity. This phenomenon may be caused by crystal quality. Thus, in this study, we attempted to evaluate the crystal quality of N-doped BaSi₂ by w-scan x-ray rocking curve.