[15p-P14-1~11] 13.3 絶縁膜技術

▲ [15p-P14-3] Trichloroethene Concentration Effect on Deposition Rate and Properties of Low-Temperature Grown SiO₂ Films by using Silicone Oil and Ozone Gas

〇(D)Jain Puneet¹、Horita Susumu¹ (1.Japan Adv. Inst. Sci. & Tech. (JAIST))

キーワード：APCVD, SiO2 Thin Film

SiO₂ thin films are formed by atmospheric pressure chemical vapor deposition (APCVD) using silicone oil and ozone gas. Apart from silicone oil and ozone gas, trichloroethene was also added during the depositions. The deposition rate of the films increases with an increase in the concentration of trichloroethene, but excess of trichloroethene concentration enhances gas phase reaction, which reduces deposition rate. These films also contain non-negligible amount of Si-OH bonds. It was also observed that the Si-OH content in the deposited films does not depend much on the concentration of trichloroethene.