The 64th JSAP Spring Meeting, 2017

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13 Semiconductors » 13.3 Insulator technology

[15p-P14-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P14 (BP)

4:00 PM - 6:00 PM

[15p-P14-6] Mechanism of Dipole Layer Formation at AlOxNy/SiO2 Interface by Molecular Dynamics Simulation

〇Okuto Takahashi1, Ryota Kunugi1, Nobuhiro Nakagawa1, Takanobu Watanabe1 (1.Waseda Univ.)

Keywords:MD calculation, dipole, high-k