The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[15p-P15-1~17] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P15 (BP)

4:00 PM - 6:00 PM

[15p-P15-14] Fabrication of Phase-Transition Neuron Firing by Joule Heat Accumulation

Takeaki Yajima1, Tomonori Nishimura1, Akira Toriumi1 (1.The Univ. of Tokyo)

Keywords:Neuromorphic hardware, Metal-insulator transition, VO2

An artificial neuron for the neuromorphic hardware was fabricated by using the metal-insulator transition in vanadium dioxide (VO2). This VO2 neuron fires by accumulating Joule heat generated by the input voltage pulses, unlike the conventional artirficial neuron which accumulates input charge in the capacitor. The fabricated VO2 neuron is more suitable for integrated circuits due to its small occupation area compared with the conventional artificial neuron using capacitors.