[15p-P15-1~17] 13.5 Semiconductor devices and related technologies

[15p-P15-15] SiGe buried channel p-MOSFET formed by sputter epitaxy

〇Takuma Yagi¹, Takahiro Tsukamoto¹, Nobumitsu Hirose², Takafumi Kojima³, Akifumi Kasamatsu², Toshiaki Matsui², Yoshinori Uzawa², Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol., 2.National Inst. of Inf. and Commun., 3.National Astronomical Observatory of Japan.)

Keywords:SiGe, sputter epitaxy