[15p-P15-1~17] 13.5 Semiconductor devices and related technologies

[15p-P15-17] Analysis of charge collection caused by radiation in a FinFET technology

〇Shinichiro Abe¹, Tatsuhiko Sato¹, Takashi Kato², Hideya Matsuyama² (1.JAEA, 2.Socionext Inc.)

Keywords:Radiation, Semiconductor device, Soft error

Radiation-induced charges in semiconductor device cause temporary and non-destructive faults (the so-called soft errors) in microelectronic devices. The model which estimates charges collected in the storage node of a memory element quickly and accurately is necessary to evaluate soft error rate by simulation. It is predicted that charge collection process in FinFET is differs from that in planar process due to differences in their structures. In this study, we perform systematic investigation of charge collection caused by radiation in order to construct the charge collection model for FinFET.