[15p-P15-1~17] 13.5 Semiconductor devices and related technologies

△ [15p-P15-2] Temperature dependence of hole transport properties in silicon quantum dots

〇Naoki Shimatani¹, Yu Yamaoka¹, Ryoichi Ishihara², Aleksey Andreev³, David Williams³, Shunri Oda¹, Tetsuo Kodera¹ (1.Tokyo Tech Univ., 2.TU Delft Univ., 3.Hitachi Camb Inst.)

Keywords:silicon quantum dot, temperature dependence