[15p-P15-1~17] 13.5 デバイス／集積化技術

▲ [15p-P15-4] Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes

〇Prabhudesai Gaurang^1,2、Anh Le The³、Shibuya Mitsuki¹、Manoharan Muruganathan³、Hori Masahiro¹、Ono Yukinori¹、Mizuta Hiroshi³、Tabe Michiharu¹、Moraru Daniel¹ (1.Research Inst. of Electronics, Shizuoka University、2.GSIST, Shizuoka Uni.、3.JAIST, Japan)

キーワード：donor-acceptor pairs, nano Si tunnel diodes

Inter-band tunneling in Si nanodevices is an attractive mechanism for future electronics, for instance, in tunnel FETs or Esaki diodes. However, the indirect bandgap nature of Si remains a problem because it requires assistance of phonons for momentum conservation. It was proposed to enhance the current by introducing isoelectronic traps (IETs) that contribute to k-momentum dispersion. However, only Al-N complexes have been efficient in Si so far, which are relatively non-conventional elements.

Here, we present our study of conventional impurities, phosphorus (P) and boron (B), heavily doped in low-dimensional (2D) Si diodes. We focus on the impact of P-B pairs on inter-band tunneling transport and analyze the possibility that they positively work for enhancing the current.