[15p-P15-1~17] 13.5 Semiconductor devices and related technologies

▲ [15p-P15-4] Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes

〇Gaurang Prabhudesai^1,2, Le The Anh³, Mitsuki Shibuya¹, Muruganathan Manoharan³, Masahiro Hori¹, Yukinori Ono¹, Hiroshi Mizuta³, Michiharu Tabe¹, Daniel Moraru¹ (1.Research Inst. of Electronics, Shizuoka University, 2.GSIST, Shizuoka Uni., 3.JAIST, Japan)

Keywords:donor-acceptor pairs, nano Si tunnel diodes

Inter-band tunneling in Si nanodevices is an attractive mechanism for future electronics, for instance, in tunnel FETs or Esaki diodes. However, the indirect bandgap nature of Si remains a problem because it requires assistance of phonons for momentum conservation. It was proposed to enhance the current by introducing isoelectronic traps (IETs) that contribute to k-momentum dispersion. However, only Al-N complexes have been efficient in Si so far, which are relatively non-conventional elements.

Here, we present our study of conventional impurities, phosphorus (P) and boron (B), heavily doped in low-dimensional (2D) Si diodes. We focus on the impact of P-B pairs on inter-band tunneling transport and analyze the possibility that they positively work for enhancing the current.