[15p-P15-1~17] 13.5 Semiconductor devices and related technologies

[15p-P15-8] Error Correcting Code for Read-Disturb Errors in 1Xnm TLC NAND Flash Memory

〇Yoshiaki Deguchi¹, Ken Takeuchi¹ (1.Chuo Univ.)

Keywords:NAND flash memory, Read-disturb error, Error correcting code

Recently, the bit cost of NAND flash memory is reduced by multi-level cell and scaling technologies. However, the reliability is degraded by frequently read operation, especially in SNS and artificial intelligence (AI). In this paper, to correct read-disturb error, Read-Disturb Modeled LDPC (RDM-LDPC) is proposed.