[15p-P3-1~26] 6.3 Oxide electronics

[15p-P3-14] Epitaxial growth of VO₂ films on sapphire substrates

〇Takeshi Kusumori¹, Setsuo Nakao¹ (1.AIST)

Keywords:Vanadium dioxide, pulsed-laser ablation, epitaxy

Sapphire is an important substrate for epitaxial growth of oxide and metal films. Vanadium dioxide has been attracted much attention because of its unique phase transition characteristics accompanied by large latent heat and electric conductivity change. Epitaxial films are one of the most important form for its application. Here we present a systematic study of crystallinity of vanadium dioxide films fabricated on sapphire substrates which is strongly affected by the surface net of substrate and growth temperature.