[15p-P4-1~9] 9.1 誘電材料・誘電体

▲ [15p-P4-5] Controlling Mg and Ti content in MgTi-doped-AlN for enhancement of the piezoelectric response

〇Anggraini Sri Ayu¹、Akiyama Morito¹、Yamada Hiroshi¹ (1.AIST)

キーワード：piezoelectric, AlN, sputtering

Aluminum nitride (AlN) has been the most used thin films for many years, primarily for bulk acoustic wave (BAW) bandpass filter for mobile telecommunication devices. It is of interest due to its excellent chemical stability and piezoelectric properties. The rapid advance in telecommunication technology calls for continuous improvement in the performance of AlN. The piezoelectric property of AlN has been reported to be largely augmented after doping it with scandium (Sc). Although addition of Sc could bring an improvement in the piezoelectric response of AlN by 500%, the high cost of Sc has become a drawback in commercializing Sc-doped-AlN thin film. Therefore, numerous efforts have been done to find cheaper dopant that could substitute Sc. Iwasaki et al has conducted first principle calculation to propose a series of potential dopants that may give a comparable improvement in the piezoelectric response of AlN as Sc does. Among the proposed dopant couples, the effect of Mg and Ti co-addition on the piezoelectric response of AlN has never been reported before. Since the concentration of Mg and Ti that was doped into AlN may has some effect on the resulting piezoelectric response, this study was focused on controlling the concentration of Mg and Ti addition into AlN for enhancement of the piezoelectric response.