[15p-P7-1~5] 15.5 Group IV crystals and alloys

[15p-P7-2] Depth characterization of chemical states in GeSn thin film by HAXPES (II)

〇Koji Usuda¹, Riichiro Takaishi¹, Masahiko Yoshiki¹, Kohei Suda², Atsushi Ogura², Mitsuhiro Tomita¹ (1.Toshiba Corp., 2.Meiji Univ.)

Keywords:GeSn, Synchrotron Radiation, HAXPES

GeSn thin-film is attractive for high-mobility channel, and optical application. However, solubility limit of Sn within a GeSn is considered to be as low as 1 atomic % order, and a new GeSn growth method and an evaluation method are required to realize a high quality GeSn film. So, this report reports the depth characterization of chemical states in GeSn thin film by the HAXPES method.