[15p-P8-1~10] 15.7 Crystal evaluation, impurities and crystal defects

[15p-P8-9] Gamma ray irradiation effect on ZnO bulk single crystal: origin of low resistivity

〇(B)Junya Tashiro¹, Yuki Torita¹, Kazuo Kuriyama¹, Kazumasa Kushida², Qiu Xu³, Atushi Kinomura³ (1.Hosei Univ., 2.Okyou Univ., 3.kyoto Univ.)

Keywords:ZnO, gamma ray, low resistivity

In the PL, it was observed that the intensity of GL peak increased by about 14% for ZnO after γ ray irradiation than for unirradiated ZnO. In addition, according to the van der Pauw method, the resistivity was measured as 4.08 × 10⁴ Ωcm for unirradiated ZnO and 3.05 × 10² Ωcm for ZnO after γ ray irradiation, and the resistivity of after γ ray irradiation was decreased by 2 orders of magnitude did.