[16a-412-1~10] 13.5 Semiconductor devices and related technologies

[16a-412-6] Correlation between Static Random Access Memory Power-up State and Transistor Variation

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, HIROFUMI SHINOHARA², TAKUYA SARAYA¹, MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.Univ. Tokyo, 2.Waseda Univ.)

Keywords:SRAM, power-up state

Correlation between SRAM power-up state and cell transistor variation was studied using circuit simulations. It was found that, as the power supply voltage ramping speed is increased, the contribution of pFET mismatch on the start-up state determination increases. This behavior can be explained by the changing balance between static and capacitive current flowing in the cell.