[16a-413-1~12] 13.3 絶縁膜技術

▼ [16a-413-12] Opportunity for dipole layer formation at an non-SiO₂ dielectric interface - MgO/Al₂O₃

〇(D)Fei Jiayang¹、喜多 浩之¹ (1.東大)

キーワード：gate dielectrics

Interface dipole layer formation has been mainly demonstrated for high-k/SiO₂ stacks. Even though we have previously reported dipole-induced flatband voltage (V_fb) at a non-SiO₂ interface - Al₂O₃/AlF_xO_y, the reports on dipole layer formation at high-k/high-k interfaces are quite limited. In this work, we studied the dipole layer formation at MgO/Al₂O₃ interface which could be affected by processing conditions significantly. Molecular dynamics (MD) simulation was also conducted at MgO/Al₂O₃ interface to discuss the possible driving force.