[16a-419-1~12] 6.3 Oxide electronics

[16a-419-10] Control of Resistive Switching Properties of SiO_x Embedded with Ti Nanodots by Constant Voltage and Constant Current Application

〇Yusuke Kato¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Keywords:resistive random access memory, nanodots, Si oxide