[16a-421-1~11] 3.16 Optics and Photonics English Session

▲ [16a-421-11] Fabrication of 1.5um GaInAsP LD on InP/Si Substrate using Hydrophilic Wafer Bonding Technique

〇(D)Kallarasan Gandhi¹、Nishiyama Tetsuo¹、Kamada Naoki¹、Onuki Yuya¹、Shimomura Kazuhiko¹ (1.Sophia Univ.)

キーワード：semiconductor lasers, optoelectronics

Recent times, 1.5um laser emission on silicon platform has received a great deal of attention among the researchers. Our proposal to demonstrate MOVPE growth on wafer bonded InP/Si substrate is a unique approach for the monolithic integration. In the previous paper, we have demonstrated 1.2um LD on InP/Si substrate. In this paper, we have demonstrated for the first time 1.5um LD on the InP/Si substrate using the direct wafer bonding method.